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| BB 555 Silicon Tuning Diode * For UHF-TV-tuners * High capacitance ratio * Low series inductance * Low series resistance * Extremely small plastic SMD package * Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 555 BB 555 Marking Ordering Code B B Q62702-B0864 Q62702-B0853 unmatched inline matched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R 5k) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 55 ...+150 55 ...+150 mA C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-28-1998 1998-11-01 BB 555 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 200 Unit IR IR - nA VR = 30 V Reverse current VR = 30 V, TA = 85 C AC characteristics Diode capacitance CT 17.5 14.1 2.05 1.9 18.7 15 2.24 2.1 6.7 8.9 20 16.1 2.4 2.3 7.5 9.8 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 CT1/C T28 CT/C T 6 8.2 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching 1) VR = 1V to 28V , f = 1 MHz, 4 diodes sequence VR = 1V to 28V , f = 1 MHz, 7 diodes sequence Series resistance - 0.15 0.25 0.58 0.6 1 2 nH rs Ls - VR = 3 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-28-1998 1998-11-01 BB 555 Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 20 pF 16 1/C CT 14 12 10 8 6 4 2 0 0 T Cc 10 -4 5 10 15 20 V 30 10 -5 0 10 10 1 V 10 2 VR VR Reverse current I R = f (VR) T A = Parameter 10 3 pA 85C Reverse current IR = f (TA) VR = 28V 10 3 pA IR 10 2 IR 10 2 25C 10 1 10 1 10 0 10 -1 0 10 10 1 V 10 2 10 0 -30 -10 10 30 50 70 C 100 VR TA Semiconductor Group Semiconductor Group 33 Jul-28-1998 1998-11-01 BB 555 Normalized diode capacitance C(TA) / C(25C)= f (T A) f = 1MHz, VR = Parameter 1.06 CTA / C25 1V 1.02 2V 25V 1.00 0.98 0.96 -30 -10 10 30 50 70 C 110 TA Semiconductor Group Semiconductor Group 44 Jul-28-1998 1998-11-01 |
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